Effect of Plasma Oxygen Content on the Size and Content of Silicon Nanoclusters in Amorphous SiOx Films Obtained with Plasma-Enhanced Chemical Vapor Deposition
نویسندگان
چکیده
The influence of Ar + SiH4 O2 plasma formulation on the phase composition and optical properties amorphous SiOx films with silicon nanoclusters obtained using PECVD DC discharge modulation was studied. Using a unique technique ultrasoft X-ray emission spectroscopy, it found that at 0.15 mol.% oxygen content, a-Si are formed. At high content (≥21.5 mol.%), nanocomposite based suboxide containing ncl-Si It matrix consists mixture SiO1.3 SiO2 phases, average oxidation state x in is ~1.5. An increase concentration reactor atmosphere from 21.5 to 23 leads decrease 40 15% an 1.5 1.9. In this case, two phases dioxide non-stoichiometric oxide SiO1.7. Thus, according experimental data USXES, these pure form differs their representation both random coupling models. A accompanied by sizes ~3 ~2 nm shift photoluminescence band 1.9 eV 2.3 eV, respectively.
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ژورنال
عنوان ژورنال: Symmetry
سال: 2023
ISSN: ['0865-4824', '2226-1877']
DOI: https://doi.org/10.3390/sym15091800